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MOSFET N-Channel 60V 60A TO-220AB
MOSFET N-Channel 60V 60A TO-220AB
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Condition: New
Brand: STMicroelectronics
MPN: STP60NF06
MPN Xref:STP60NF06, 611660, STMI-0042237, TMOSP7394, STP60NF07, 89K1627, STMI-0019000, 9803262, 4857800
This MOSFET N-Channel transistor has a drain-source voltage of 60V and a maximum continuous drain current of 60A, making it ideal for high power applications. It features a low on-state resistance of 16m?, allowing for efficient power transfer. The transistor is designed for through hole mounting in a TO-220 package.
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: STMicroelectronics
MPN: STP60NF06
MPN Xref:STP60NF06, 611660, STMI-0042237, TMOSP7394, STP60NF07, 89K1627, STMI-0019000, 9803262, 4857800
This MOSFET N-Channel transistor has a drain-source voltage of 60V and a maximum continuous drain current of 60A, making it ideal for high power applications. It features a low on-state resistance of 16m?, allowing for efficient power transfer. The transistor is designed for through hole mounting in a TO-220 package.
Operating Temp Max Celsius | -55.0 |
ECCN US | 175.0 |
ECCN EU | EAR99 |
Packing Type | NEC |
RoHs compliant | Tube |
Grade | Ecopack2 |
Package Name | Industrial |
Operating Temp Min Celsius | TO-220 |
Type of transistor | N-MOSFET |
Technology | STripFET? II |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 42A |
Power dissipation | 110W |
Case | TO220-3 |
Gate-source voltage | ?20V |
On-state resistance | 16m? |
Mounting | THT |
Kind of package | tube |
Kind of channel | enhanced |
Manufacturer Product Number | STP60NF06 |
Description | MOSFET N-CH 60V 60A TO220AB |
Manufacturer Standard Lead Time | 52 Weeks |
Detailed Description | N-Channel 60 V 60A (Tc) 110W (Tc) Through Hole TO-220 |
Category | Discrete Semiconductor Products |
Series | STripFET? II |
Package | - |
Product Status | Active |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25?C | 10V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | ?20V |
Gate Charge (Qg) (Max) @ Vgs | 1660 pF @ 25 V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55?C ~ 175?C (TJ) |
Mounting Type | TO-220AB |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Base Product Number | STP60 |
Current | 60 |
Type | Transistor N Channel MOSFET |
Manufacturer | ST Microelectronics - STM |
EAN | 5052406840440 |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Rise Time | 108 ns |
Configuration | Single |
Alternate Part No. | 511-STP60NF06 |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 60 A |
Manufacturer Part No. | STP60NF06 |
Product Category | MOSFET |
Packaging | Tube |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Package/Case | TO-220-3 |
Rds On - Drain-Source Resistance | 16 mOhms |
Typical Turn-Off Delay Time | 43 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |
Forward Transconductance - Min | 50 S |
Pd - Power Dissipation | 150 W |
Fall Time | 20 ns |
Part Status | N-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 16mOhm @ 30A, 10V |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
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