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MOSFET N-Channel 60V 50A TO-220FP

MOSFET N-Channel 60V 50A TO-220FP

Regular price $0.44 USD
Regular price Sale price $0.44 USD
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20 in stock

Condition: New
Brand: STMICROELECTRONICS
MPN: STP55NF06FP
MPN Xref:STP55NF06FP, 9803220, 511-STP55NF06FP, 497-3193-5-ND, 70389674, 4862335, 26M3700, STMI-0050347

This MOSFET is a N-channel transistor with a drain-source voltage of 60V and a current capacity of 50A. It has a power dissipation of 30W and is designed for through hole mounting.
Category Discrete Semiconductor Products
Series STripFET? II
Package Active
Part Status N-Channel
FET Type N-Channel
Technology 50A (Tc)
Current - Continuous Drain (Id) @ 25?C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18mOhm @ 27.5A, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id ?20V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -55?C ~ 175?C (TJ)
Operating Temperature -55?C ~ 175?C (TJ)
Mounting Type TO-220FP
Supplier Device Package TO-220-3 Full Pack
Package / Case TO-220-3 Full Pack
Drain to Source Voltage (Vdss) 60 nC @ 10 V
Gate Charge (Qg) (Max) @ Vgs 1300 pF @ 25 V
Manufacturer Product Number STP55NF06FP
Description MOSFET N-CH 60V 50A TO220FP
Manufacturer Standard Lead Time 52 Weeks
Detailed Description N-Channel 60 V 50A (Tc) 30W (Tc) Through Hole TO-220FP
Product Status Active
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Base Product Number STP55
Operating Temp Max Celsius -55.0
ECCN US 175.0
ECCN EU EAR99
Packing Type NEC
RoHs compliant Tube
Grade Ecopack2
Package Name Industrial
Operating Temp Min Celsius TO-220FP
Vgs - Gate-Source Breakdown Voltage 20 V
Rds On - Drain-Source Resistance 15 mOhms
Forward Transconductance - Min 18 S
Vgs th - Gate-Source Threshold Voltage 3 V
Mounting Style Through Hole
Typical Turn-Off Delay Time 36 ns
Product Category MOSFET
Fall Time 15 ns
Vds - Drain-Source Breakdown Voltage 60 V
Transistor Polarity N-Channel
Rise Time 50 ns
Channel Mode Enhancement
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 30 W
Qg - Gate Charge 44.5 nC
Unit Weight 2.040 g
Id - Continuous Drain Current 50 A
Alternate Part No. 511-STP55NF06FP
Package/Case TO-220FP-3
Manufacturer Part No. STP55NF06FP
Packaging Tube
Configuration Single
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 35A
Power dissipation 30W
Case TO220FP
Gate-source voltage ?20V
On-state resistance 18m?
Mounting THT
Kind of package tube
Kind of channel enhanced
Features of semiconductor devices ESD protected gate


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