N-MOSFET Transistor 1500V 2.5A

Condition: New
Brand: STMicroelectronics
MPN: STFW3N150
MPN Xref:STFW3N150, 2098244, 70389624, 511-STFW3N150, 7610493, 94T3364, STFW3N151, 497-10005-5-ND, TMOSP10601

N-MOSFET transistor with 1500V drain-source voltage and 2.5A drain current. Features enhanced channel and 63W power dissipation. Comes in a TO3PF case.

Category	Discrete Semiconductor Products
Series	PowerMESH?
Package	-
Part Status	N-Channel
FET Type	N-Channel
Technology	PowerMesh?
Current - Continuous Drain (Id) @ 25?C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	9Ohm @ 1.3A, 10V
Rds On (Max) @ Id, Vgs	9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250?A
Vgs (Max)	-
FET Feature	63W (Tc)
Power Dissipation (Max)	63W (Tc)
Operating Temperature	150?C (TJ)
Mounting Type	ISOWATT-218FX
Supplier Device Package	ISOWATT218FX
Package / Case	1500 V
Drain to Source Voltage (Vdss)	1500 V
Gate Charge (Qg) (Max) @ Vgs	939 pF @ 25 V
Manufacturer Product Number	STFW3N150
Description	MOSFET N-CH 1500V 2.5A ISOWATT
Manufacturer Standard Lead Time	39 Weeks
Detailed Description	N-Channel 1500 V 2.5A (Tc) 63W (Tc) Through Hole TO-3PF
Product Status	Active
Drive Voltage (Max Rds On, Min Rds On)	10V
Input Capacitance (Ciss) (Max) @ Vds	939 pF @ 25 V
Base Product Number	STFW3
ECCN EU	EAR99
Packing Type	NEC
RoHs compliant	Tube
Grade	Ecopack1
Package Name	Industrial
ECCN US	TO-3PF
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1500V
Drain current	1.6A
Power dissipation	63W
Case	TO3PF
Gate-source voltage	?30V
On-state resistance	9000m?
Mounting	THT
Kind of package	tube
Kind of channel	enhanced

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