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STMicroelectronics NPN Transistor 80V 1.5A

STMicroelectronics NPN Transistor 80V 1.5A

Regular price $0.17 USD
Regular price Sale price $0.17 USD
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58 in stock

Condition: New
Brand: ST Micro
MPN: BD139
MPN Xref:BD139, TDSTD7147, 22165191, 70013850, 3141823, STMI-0042015, 22100820, BD139OS-ND, 89K0465

This transistor is a bipolar NPN transistor with a collector-emitter voltage of 80V and collector current of 1.5A. It is designed for through-hole mounting and has a power dissipation of 12.5W. The transistor is in a TO126 or SOT32 case and has a current gain of 25-250. Its frequency range is up to 50MHz. Manufacturer: STMicroelectronics.
Manufacturer STMicroelectronics
Type of transistor NPN
Polarisation bipolar
Collector-emitter voltage 80V
Collector current 1.5A
Power dissipation 12.5W
Case TO126
Current gain 25...250
Mounting THT
Kind of package tube
Frequency 50MHz
Category Discrete Semiconductor Products
Mfr STMicroelectronics
Series -
Package Tube
Part Status Active
Transistor Type NPN
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Frequency - Transition -
Operating Temperature 150?C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package SOT-32-3
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 1.25 W
Manufacturer Product Number BD139
Description TRANS NPN 80V 1.5A SOT32-3
Manufacturer Standard Lead Time 22 Weeks
Detailed Description Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3
Product Status Active
Base Product Number BD139
EAN 5052406566494
Type Audio
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 8.0
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity Bipolar NPN
Derate Above 25?C 100m
Trans. Freq (Hz) Min. 250M
Oper. Temp (?C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 ?C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
Weight (lbs) (0.0025)
Case Style TO-126
Voltage (V) 80
Watts 8
Current 1.5
ECCN EU EAR99
Packing Type NEC
RoHs compliant Tube
Grade Ecopack1
Package Name Industrial
ECCN US SOT-32


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