MOSFET P-CH 30V 1.1A SUPERSOT3

MOSFET P-CH 30V 1.1A SUPERSOT3

Regular price $0.40 USD
Regular price Sale price $0.40 USD
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70 in stock

Condition: New
Brand: ONSEMI
MPN: NDS356AP
MPN Xref:NDS356AP

MOSFET P-CH 30V 1.1A SUPERSOT3
Category Discrete Semiconductor Products
Mfr ON Semiconductor
Series -
Package Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250?A
Vgs (Max) ?20V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case SOT-23
Drain to Source Voltage (Vdss) 30 V
Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
Base Product Number NDS356
Manufacturer Product Number NDS356AP
Description MOSFET P-CH 30V 1.1A SUPERSOT3
Detailed Description P-Channel 30 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Product Status Obsolete
Package/Case SOT-23
Product Categories MOSFET
RoHs Status Pb-free Halide free
In-stock 10000
Resistance Drain Source RDS (on) 0.2 Ohms
Configuration Single
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Packaging Reel
Fall Time 17 ns
Minimum Operating Temperature - 55 C
Power Dissipation 0.5 W
Rise Time 17 ns
Factory Pack Quantity 3000
Typical Turn Off Delay Time 53 ns
Part # Aliases NDS356AP_NL
Manufacturer Fairchild Semiconductor
Type SemiConductor
device package type ssot-3
package T&R
item per pack 1
device function p-channel mosfet
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -1.1A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ?20V
On-state resistance 0.4?
Mounting SMD
Gate charge 4.4nC
Kind of package reel,
Kind of channel enhanced


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