This MOSFET is a N-Channel enhancement mode transistor with a drain-source voltage of 30V and a drain current of 1.7A. It has a low on-state resistance of 85mOhms and a gate-source voltage of -20V. The package is SMD/SMT and it is available in Tape & Reel (TR) packaging.
Type
SemiConductor
Case
SOT23
Product Category
MOSFET
Id - Continuous Drain Current
1.7 A
Vds - Drain-Source Breakdown Voltage
30 V
Rds On - Drain-Source Resistance
85 mOhms
Transistor Polarity
N-Channel
Vgs - Gate-Source Breakdown Voltage
20 V
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
500 mW
Mounting Style
SMD/SMT
Package / Case
SSOT-3
Channel Mode
Enhancement
Configuration
Single
Rise / Fall Time
32 ns
Packaging
Reel
Rise Time
32 ns
Manufacturer Part No.
NDS355AN
Part # Aliases
NDS355AN_NL
Minimum Operating Temperature
- 55 C
Series
NDS355
Alternate Part No.
512-NDS355AN
Package/Case
SSOT-3
Fall Time
32 ns
Unit Weight
30 mg
Typical Turn-Off Delay Time
13 ns
device function
-
device package type
sot-23
package
T&R
item per pack
1
Manufacturer
ONSEMI
Manufacturer Product Number
NDS355AN
Description
MOSFET N-CH 30V 1.7A SUPERSOT3
Manufacturer Standard Lead Time
24 Weeks
Detailed Description
N-Channel 30 V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Category
Discrete Semiconductor Products
Mfr
onsemi
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25?C
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250?A
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 5 V
Vgs (Max)
?20V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55?C ~ 150?C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Base Product Number
NDS355
Product Categories
MOSFET
RoHs Status
Pb-free Halide free
In-stock
80000
Resistance Drain Source RDS (on)
0.085 Ohms
Power Dissipation
0.5 W
Factory Pack Quantity
3000
Typical Turn Off Delay Time
13 ns
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
1.7A
Power dissipation
0.5W
Gate-source voltage
?20V
On-state resistance
0.23?
Mounting
SMD
Gate charge
5nC
Kind of package
reel,
Kind of channel
enhanced
Features of semiconductor devices
logic level
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