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BRT PNP Pre-Biased Transistor 50V SOT23-3

BRT PNP Pre-Biased Transistor 50V SOT23-3

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30 in stock

Condition: New
MPN Xref:MMUN2133LT1G, MMUN2133LT1GOSCT-ND, 2317628, 26K4612, 7814376, MMUN2133LT1GOSDKR-ND, MMUN2133LT1GOSTR-ND, 863-MMUN2133LT1G, ONSM-0040661

Manufacturer ONSEMI
Type of transistor PNP
Polarisation bipolar
Kind of transistor BRT
Collector-emitter voltage 50V
Collector current 0.1A
Power dissipation 0.246W
Case SOT23
Mounting SMD
Kind of package reel,
Base resistor 4.7k?
Base-emitter resistor 47k?
Manufacturer Product Number MMUN2133LT1G
Description TRANS PREBIAS PNP 50V SOT23-3
Manufacturer Standard Lead Time 12 Weeks
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Category Discrete Semiconductor Products
Mfr onsemi
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300?A, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMUN2133
Package/Case SOT-23-3
Product Categories Digital Transistors
RoHs Status Rohs
In-stock 208
Mounting Style SMD/SMT
DC Collector/Base Gain hfe Min 80
Collector Emitter Voltage VCEO Max 50 V
Continuous Collector Current 0.1 A
Peak DC Collector Current 100 mA
Power Dissipation 246 mW
Maximum Operating Temperature + 150 C
Packaging Reel
Minimum Operating Temperature - 55 C
Factory Pack Quantity 3000
Part Status Active

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