MOSFET N-CH 100V 1.7A SOT223-4

Condition: New
Brand: ONSEMI
MPN: FQT7N10TF
MPN Xref:FQT7N10TF, 2453450, FQT7N10TFCT-ND, 512-FQT7N10TF, 31Y1565, FQT7N10TFDKR-ND, 82C4379, FQT7N10TF**MULT1, 8075932

This is a description for the MOSFET N-CH 100V 1.7A SOT223-4.

Manufacturer Product Number	FQT7N10TF
Description	MOSFET N-CH 100V 1.7A SOT223-4
Detailed Description	N-Channel 100 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
Category	Integrated Circuits (ICs)
Series	QFET?
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25?C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id	4V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Vgs (Max)	?25V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA
Base Product Number	FQT7N10
Package/Case	SOT-223
Product Categories	MOSFET
RoHs Status	Rohs
In-stock	86300
Resistance Drain Source RDS (on)	0.35 Ohms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Packaging	Reel
Fall Time	19 ns
Forward Transconductance gFS (Max / Min)	1.85 S
Minimum Operating Temperature	- 55 C
Power Dissipation	2 W
Rise Time	24 ns
Factory Pack Quantity	4000
Typical Turn Off Delay Time	13 ns
Part Status	Active
Mfr	ON Semiconductor

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