600V N-MOSFET Power Field-Effect Transistor

Condition: New
Brand: ON SEMICONDUCTOR
MPN: FQPF2N60C
MPN Xref:FQPF2N60C, 91K9885, 1095084, FAIR-0052648, 6715244, FQPF2N60C-ND, 512-FQPF2N60C

This power field-effect transistor is designed for high voltage and high-speed switching applications. It has a drain-source voltage of 600V and a maximum drain current of 1.35A. The transistor is housed in a TO220FP or TO220F case.

Manufacturer	ONSEMI
Manufacturer Product Number	FQPF2N60C
Description	MOSFET N-CH 600V 2A TO220F
Detailed Description	N-Channel 600 V 2A (Tc) 23W (Tc) Through Hole TO-220F-3
Category	Discrete Semiconductor Products
Mfr	Fairchild Semiconductor
Series	FQPF2N60C
Package	Active
Product Status	Obsolete
FET Type	N-Channel
Technology	QFET?
Drain to Source Voltage (Vdss)	12 nC @ 10 V
Current - Continuous Drain (Id) @ 25?C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250
Gate Charge (Qg) (Max) @ Vgs	235 pF @ 25 V
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	23W (Tc)
Operating Temperature	-55
Mounting Type	TO-220F
Supplier Device Package	TO-220-3 Full Pack
Package / Case	TO-220F
Part Status	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.7Ohm @ 1A, 10V
Base Product Number	FQPF2
Lead Free Status / RoHS Status	RoHS Compliant
Manufacturer Part Number	FQPF2N60C
Manufacturer Standard Lead Time	8 Weeks
Packaging	Tube
Standard Package	1,000
Alternate Parts	FQPF2N60
Package/Case	TO-220FP-3
Product Categories	MOSFET
RoHs Status	Green
In-stock	5119
Resistance Drain Source RDS (on)	4.7 Ohms
Configuration	Single
Maximum Operating Temperature	+150 °C
Mounting Style	Through Hole
Fall Time	28 ns
Forward Transconductance gFS (Max / Min)	5 S
Minimum Operating Temperature	-55 °C
Power Dissipation	23 W
Rise Time	25 ns
Factory Pack Quantity	50
Typical Turn Off Delay Time	24 ns
Part # Aliases	FQPF2N60C_NL
Type	Transistor
EAN	5052406519346
Case	TO220FP
Number of Elements per Chip	1
Length	10.16mm
Transistor Configuration	Single
Maximum Continuous Drain Current	2 A
Package Type	TO-220F
Maximum Power Dissipation	23 W
Width	4.7mm
Height	9.19mm
Minimum Gate Threshold Voltage	2V
Maximum Drain Source Resistance	4.7 ?
Maximum Drain Source Voltage	Maximum Drain Source Voltage
Pin Count	Pin Count
Typical Gate Charge @ Vgs	Typical Gate Charge @ Vgs
Transistor Material	Transistor Material
Channel Mode	Channel Mode
Channel Type	Channel Type
Maximum Gate Source Voltage	Maximum Gate Source Voltage
Stock	Stock
Manufacturer Part No.	FQPF2N60C
Brand	Fairchild Semiconductor
Unit Weight	2.270 g
Transistor Polarity	N-Channel
Id - Continuous Drain Current	2 A
Alternate Part No.	512-FQPF2N60C
Rds On - Drain-Source Resistance	4.7 Ohms
Forward Transconductance - Min	5 S
Vgs - Gate-Source Breakdown Voltage	30 V
Typical Turn-Off Delay Time	24 ns
Product Category	MOSFET
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	23 W
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	1.35A
Power dissipation	23W
Gate-source voltage	?30V
On-state resistance	4.7?
Mounting	THT
Gate charge	12nC
Kind of package	tube
Kind of channel	enhanced

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