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MOSFET N-CH 60V 52.4A TO220-3

MOSFET N-CH 60V 52.4A TO220-3

Regular price $0.23 USD
Regular price Sale price $0.23 USD
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20 in stock

Condition: New
Brand: ON Semiconductor
MPN Xref:FQP50N06L, FQP50N06L-ND, 107-FQP50N06L, 512-FQP50N06L, 1611615, 6715146, 38C7278

MOSFET N-CH 60V 52.4A TO220-3
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET?
Polarisation unipolar
Drain-source voltage 60V
Drain current 37.1A
Pulsed drain current 210A
Power dissipation 121W
Case TO220-3
Gate-source voltage ?20V
On-state resistance 21m?
Mounting THT
Gate charge 24.5nC
Kind of package tube
Kind of channel enhanced
Manufacturer Product Number FQP50N06L
Description MOSFET N-CH 60V 52.4A TO220-3
Detailed Description N-Channel 60 V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3
Category Integrated Circuits (ICs)
Mfr onsemi
Series QFET?
Package Tube
Product Status Obsolete
FET Type N-Channel
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25?C 52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
FET Feature -
Power Dissipation (Max) 121W (Tc)
Operating Temperature -55
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number FQP50
Package/Case TO-220-3
Product Categories MOSFET
RoHs Status Green
In-stock 3999
Resistance Drain Source RDS (on) 0.021 Ohms
Configuration Single
Maximum Operating Temperature + 175 C
Mounting Style Through Hole
Packaging Tube
Fall Time 145 ns
Forward Transconductance gFS (Max / Min) 40 S
Minimum Operating Temperature - 55 C
Power Dissipation 121 W
Rise Time 380 ns
Factory Pack Quantity 50
Typical Turn Off Delay Time 80 ns
Type Transistor
Id - Continuous Drain Current 52 A
Rds On - Drain-Source Resistance 21 mOhms
Alternate Part No. 512-FQP50N06L
Typical Turn-Off Delay Time 80 ns
Manufacturer Part No. FQP50N06L
Brand Fairchild Semiconductor
Pd - Power Dissipation 121 W
Channel Mode Enhancement
Transistor Polarity N-Channel
Product Category MOSFET
Unit Weight 1.800 g
Vgs - Gate-Source Breakdown Voltage 20 V
Vds - Drain-Source Breakdown Voltage 60 V
Forward Transconductance - Min 40 S
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number FQP50N06L
Manufacturer Standard Lead Time 4 Weeks
Standard Package 1,000
Alternate Parts

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