TO-220-3 MOSFET Transistor

Condition: New
Brand: FAIRCHILD SEMICONDUCTOR
MPN: FQP30N06L
MPN Xref:FQP30N06L, 2453442, 512-FQP30N06L, 20C4477, 8075863, 1695498, FQP30N06L-ND, FAIR-0057189, 107-FQP30N06L

This MOSFET transistor has a TO-220-3 package and a maximum operating temperature of +175C. It has a drain-source resistance of 0.027 Ohms and a power dissipation of 79W.

Category	Discrete Semiconductor Products
Mfr	ON Semiconductor
Series	FQP30N06
Package	Active
Part Status	N-Channel
FET Type	N-Channel
Technology	32A (Tc)
Current - Continuous Drain (Id) @ 25?C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	35mOhm @ 16A, 10V
Rds On (Max) @ Id, Vgs	35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	?20V
Vgs (Max)	-
FET Feature	79W (Tc)
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55?C ~ 175?C (TJ)
Mounting Type	TO-220-3
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	20 nC @ 5 V
Gate Charge (Qg) (Max) @ Vgs	1040 pF @ 25 V
Product Status	Last Time Buy
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Input Capacitance (Ciss) (Max) @ Vds	1040 pF @ 25 V
Base Product Number	FQP30
Package/Case	TO-220-3
Product Categories	MOSFET
RoHs Status	Green
In-stock	44518
Resistance Drain Source RDS (on)	0.027 Ohms
Configuration	Single
Maximum Operating Temperature	+ 175 C
Mounting Style	Through Hole
Packaging	Tube
Fall Time	110 ns
Forward Transconductance gFS (Max / Min)	24 S
Minimum Operating Temperature	- 55 C
Power Dissipation	79 W
Rise Time	210 ns
Factory Pack Quantity	50
Typical Turn Off Delay Time	60 ns
Part # Aliases	FQP30N06L_NL
Type	Transistor
Case	TO220-3
Channel Mode	Enhancement
Typical Turn-Off Delay Time	60 ns
Vgs - Gate-Source Breakdown Voltage	20 V
Rds On - Drain-Source Resistance	27 mOhms
Pd - Power Dissipation	79 W
Id - Continuous Drain Current	32 A
Unit Weight	1.800 g
Forward Transconductance - Min	24 S
Alternate Part No.	512-FQP30N06L
Manufacturer Part No.	FQP30N06L
Product Category	MOSFET
Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	N-Channel
Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	22.6A
Power dissipation	79W
Gate-source voltage	?20V
On-state resistance	35m?
Mounting	THT
Kind of package	tube
Kind of channel	enhanced

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