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TO-220-3 MOSFET Transistor

TO-220-3 MOSFET Transistor

Regular price $0.81 USD
Regular price Sale price $0.81 USD
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34 in stock

Condition: New
MPN Xref:FQP30N06L, 2453442, 512-FQP30N06L, 20C4477, 8075863, 1695498, FQP30N06L-ND, FAIR-0057189, 107-FQP30N06L

This MOSFET transistor has a TO-220-3 package and a maximum operating temperature of +175C. It has a drain-source resistance of 0.027 Ohms and a power dissipation of 79W.
Category Discrete Semiconductor Products
Mfr ON Semiconductor
Series FQP30N06
Package Active
Part Status N-Channel
FET Type N-Channel
Technology 32A (Tc)
Current - Continuous Drain (Id) @ 25?C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 35mOhm @ 16A, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id ?20V
Vgs (Max) -
FET Feature 79W (Tc)
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55?C ~ 175?C (TJ)
Mounting Type TO-220-3
Supplier Device Package TO-220-3
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 20 nC @ 5 V
Gate Charge (Qg) (Max) @ Vgs 1040 pF @ 25 V
Product Status Last Time Buy
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 25 V
Base Product Number FQP30
Package/Case TO-220-3
Product Categories MOSFET
RoHs Status Green
In-stock 44518
Resistance Drain Source RDS (on) 0.027 Ohms
Configuration Single
Maximum Operating Temperature + 175 C
Mounting Style Through Hole
Packaging Tube
Fall Time 110 ns
Forward Transconductance gFS (Max / Min) 24 S
Minimum Operating Temperature - 55 C
Power Dissipation 79 W
Rise Time 210 ns
Factory Pack Quantity 50
Typical Turn Off Delay Time 60 ns
Part # Aliases FQP30N06L_NL
Type Transistor
Case TO220-3
Channel Mode Enhancement
Typical Turn-Off Delay Time 60 ns
Vgs - Gate-Source Breakdown Voltage 20 V
Rds On - Drain-Source Resistance 27 mOhms
Pd - Power Dissipation 79 W
Id - Continuous Drain Current 32 A
Unit Weight 1.800 g
Forward Transconductance - Min 24 S
Alternate Part No. 512-FQP30N06L
Manufacturer Part No. FQP30N06L
Product Category MOSFET
Vds - Drain-Source Breakdown Voltage 60 V
Transistor Polarity N-Channel
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 22.6A
Power dissipation 79W
Gate-source voltage ?20V
On-state resistance 35m?
Mounting THT
Kind of package tube
Kind of channel enhanced

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