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N-Channel MOSFET
N-Channel MOSFET
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Condition: New
Brand: ONSEMI
MPN: FQD12N20LTM
MPN Xref:FQD12N20LTM
N-channel MOSFET with a drain-source voltage of 200V and a drain current of 5.7A. Features a power dissipation of 55W and a gate-source voltage of -20V. Package includes 2500 pieces in a TO-252 case.
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: ONSEMI
MPN: FQD12N20LTM
MPN Xref:FQD12N20LTM
N-channel MOSFET with a drain-source voltage of 200V and a drain current of 5.7A. Features a power dissipation of 55W and a gate-source voltage of -20V. Package includes 2500 pieces in a TO-252 case.
| Current - Continuous Drain (Id) @ 25?C | 9A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
| Lead Free Status / RoHS Status | RoHS Compliant |
| Manufacturer Part Number | FQD12N20LTM |
| Manufacturer Standard Lead Time | 48 Weeks |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Reel |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
| Series | QFET |
| Standard Package | 2,500 |
| Supplier Device Package | TO-252, (D-Pak) |
| Technology | QFET? |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | 2V @ 250?A |
| Alternate Parts | |
| Category | Discrete Semiconductor Products |
| Mfr | ON Semiconductor |
| Package | Bulk |
| Part Status | Active |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Base Product Number | FQD12N20 |
| Package/Case | TO-252 |
| Product Categories | MOSFET |
| RoHs Status | Rohs |
| In-stock | 300 |
| Resistance Drain Source RDS (on) | 0.28 Ohms |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT |
| Fall Time | 120 ns |
| Forward Transconductance gFS (Max / Min) | 11.6 S |
| Minimum Operating Temperature | - 55 C |
| Power Dissipation | 2.5 W |
| Rise Time | 190 ns |
| Factory Pack Quantity | 2500 |
| Typical Turn Off Delay Time | 60 ns |
| Part # Aliases | FQD12N20LTM_NL |
| Manufacturer Product Number | FQD12N20LTM |
| Description | POWER FIELD-EFFECT TRANSISTOR, 9 |
| Detailed Description | N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252, (D-Pak) |
| Product Status | Active |
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 200V |
| Drain current | 5.7A |
| Power dissipation | 55W |
| Case | DPAK |
| Gate-source voltage | ?20V |
| On-state resistance | 0.32? |
| Mounting | SMD |
| Gate charge | 21nC |
| Kind of package | reel, |
| Kind of channel | enhanced |
| Manufacturer | Fairchild Semiconductor |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
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