N-MOSFET Transistor 500V 9.6A TO220FP TO220F

Condition: New
Brand: ON SEMICONDUCTOR
MPN: FDPF16N50
MPN Xref:FDPF16N50, 61M6283, 512-FDPF16N50, FAIR-0057706, 7599184, 1498959, FDPF16N50-ND

This N-MOSFET transistor has a drain-source voltage of 500V and a drain current of 9.6A. It is a unipolar transistor with a power dissipation of 38.5W. The transistor is available in TO220FP and TO220F cases.

Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	500V
Drain current	9.6A
Pulsed drain current	64A
Power dissipation	38.5W
Case	TO220FP
Gate-source voltage	?30V
On-state resistance	380m?
Mounting	THT
Gate charge	45nC
Kind of package	tube
Kind of channel	enhanced
Package/Case	TO-220F
Product Categories	MOSFET
RoHs Status	Green
In-stock	90000
Resistance Drain Source RDS (on)	0.38 Ohms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Fall Time	80 ns
Forward Transconductance gFS (Max / Min)	23 S
Minimum Operating Temperature	- 55 C
Power Dissipation	38.5 W
Rise Time	150 ns
Factory Pack Quantity	50
Typical Turn Off Delay Time	65 ns
Type	Transistor
Category	Discrete Semiconductor Products
Mfr	Fairchild Semiconductor
Series	UniFET?
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25?C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	?30V
Input Capacitance (Ciss) (Max) @ Vds	1945 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	38.5W (Tc)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Base Product Number	FDPF16
Part Status	Active
Drive Voltage (Max Rds On, Min Rds On)	10V

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