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352 in stock

Condition: New
MPN Xref:FDC3601N, 512-FDC3601N, FAIR-0057514, 82C2441, 7599015, FDC3601NCT-ND, 1471035, 63R1456, FDC3601NDKR-ND

MOSFET 2N-CH 100V 1A SSOT-6 - Mosfet Array 100V 1A 700mW Surface Mount SuperSOT?-6 - PowerTrench? PowerTrench Discrete Semiconductor Products
Manufacturer Product Number FDC3601N
Description MOSFET 2N-CH 100V 1A SSOT-6
Manufacturer Standard Lead Time 27 Weeks
Detailed Description Mosfet Array 100V 1A 700mW Surface Mount SuperSOT?-6
Category Discrete Semiconductor Products
Series PowerTrench
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25?C 1A
Rds On (Max) @ Id, Vgs 500mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250?A
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 153pF @ 50V
Power - Max 700mW
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT?-6
Base Product Number FDC3601
FET Type 2 N-Channel (Dual)
Package/Case SSOT-6
Product Categories MOSFET
RoHs Status Green
Marking Code 601
In-stock 20000
Maximum Operating Temperature +150 °C
Mounting Style SMD/SMT
Packaging Reel
Fall Time 4 ns
Forward Transconductance gFS (Max / Min) 3.6 S
Minimum Operating Temperature -55 °C
Power Dissipation 0.96 W
Rise Time 4 ns
Factory Pack Quantity 3000
Typical Turn Off Delay Time 11 ns
Part # Aliases FDC3601N_NL
Case SuperSOT-6
Type Integrated Circuit
Manufacturer Fairchild Semiconductor
Number of Elements per Chip 1
Length 3mm
Transistor Configuration Single
Brand Fairchild Semiconductor
Maximum Continuous Drain Current 1 A
Package Type SOT-23
Maximum Power Dissipation 960 mW
Width 1.7mm
Height 1mm
Minimum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 970 m?
Maximum Drain Source Voltage Maximum Drain Source Voltage
Pin Count Pin Count
Typical Gate Charge @ Vgs Typical Gate Charge @ Vgs
Transistor Material Transistor Material
Channel Mode Channel Mode
Channel Type Channel Type
Maximum Gate Source Voltage Maximum Gate Source Voltage
Stock Stock
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 1A
Power dissipation 0.96W
Gate-source voltage ?20V
On-state resistance 976m?
Mounting SMD
Kind of package reel,
Kind of channel enhanced

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