MOSFET 2N-CH 100V 1A SSOT-6

Condition: New
Brand: ONSEMI
MPN: FDC3601N
MPN Xref:FDC3601N, 512-FDC3601N, FAIR-0057514, 82C2441, 7599015, FDC3601NCT-ND, 1471035, 63R1456, FDC3601NDKR-ND

MOSFET 2N-CH 100V 1A SSOT-6 - Mosfet Array 100V 1A 700mW Surface Mount SuperSOT?-6 - PowerTrench? PowerTrench Discrete Semiconductor Products

Manufacturer Product Number	FDC3601N
Description	MOSFET 2N-CH 100V 1A SSOT-6
Manufacturer Standard Lead Time	27 Weeks
Detailed Description	Mosfet Array 100V 1A 700mW Surface Mount SuperSOT?-6
Category	Discrete Semiconductor Products
Series	PowerTrench
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25?C	1A
Rds On (Max) @ Id, Vgs	500mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	153pF @ 50V
Power - Max	700mW
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SuperSOT?-6
Base Product Number	FDC3601
FET Type	2 N-Channel (Dual)
Package/Case	SSOT-6
Product Categories	MOSFET
RoHs Status	Green
Marking Code	601
In-stock	20000
Maximum Operating Temperature	+150 °C
Mounting Style	SMD/SMT
Packaging	Reel
Fall Time	4 ns
Forward Transconductance gFS (Max / Min)	3.6 S
Minimum Operating Temperature	-55 °C
Power Dissipation	0.96 W
Rise Time	4 ns
Factory Pack Quantity	3000
Typical Turn Off Delay Time	11 ns
Part # Aliases	FDC3601N_NL
Case	SuperSOT-6
Type	Integrated Circuit
Manufacturer	Fairchild Semiconductor
Number of Elements per Chip	1
Length	3mm
Transistor Configuration	Single
Brand	Fairchild Semiconductor
Maximum Continuous Drain Current	1 A
Package Type	SOT-23
Maximum Power Dissipation	960 mW
Width	1.7mm
Height	1mm
Minimum Gate Threshold Voltage	2V
Maximum Drain Source Resistance	970 m?
Maximum Drain Source Voltage	Maximum Drain Source Voltage
Pin Count	Pin Count
Typical Gate Charge @ Vgs	Typical Gate Charge @ Vgs
Transistor Material	Transistor Material
Channel Mode	Channel Mode
Channel Type	Channel Type
Maximum Gate Source Voltage	Maximum Gate Source Voltage
Stock	Stock
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	1A
Power dissipation	0.96W
Gate-source voltage	?20V
On-state resistance	976m?
Mounting	SMD
Kind of package	reel,
Kind of channel	enhanced

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