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N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

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1863 in stock

Condition: New
MPN Xref:BSS138, 512-BSS138, FAIR-0062196, 6710324P, 9845330RL, 9845330, BSS138/BKN, 6710324, FAIR-0050826

This MOSFET is an N-Channel enhancement mode field-effect transistor designed for low voltage and low current applications.
device function -
device package type sot-23
package T&R
item per pack 1
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 50V
Drain current 0.22A
Power dissipation 0.36W
Case SOT23
Gate-source voltage ?20V
On-state resistance 6?
Mounting SMD
Gate charge 2.4nC
Kind of package reel,
Kind of channel enhanced
Features of semiconductor devices logic level
Package/Case SOT-23-3
Product Categories MOSFET
RoHs Status Pb-free Halide free
Marking Code K38
In-stock 159000
Configuration Single
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Reel
Fall Time 9 ns
Forward Transconductance gFS (Max / Min) 0.5 S
Minimum Operating Temperature - 55 C
Power Dissipation 0.36 W
Rise Time 9 ns
Factory Pack Quantity 3000
Typical Turn Off Delay Time 20 ns
Part # Aliases BSS138_NL
Category Discrete Semiconductor Products
Series BSS138
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25?C 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V
Vgs (Max) ?20V
Input Capacitance (Ciss) (Max) @ Vds 27 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Base Product Number BSS138
Typical Turn-Off Delay Time 20 ns
Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Breakdown Voltage 20 V
Manufacturer Part No. BSS138
Manufacturer Fairchild Semiconductor
Unit Weight 60 mg
Product Category MOSFET
Channel Mode Enhancement
Alternate Part No. 512-BSS138
Brand Fairchild Semiconductor
Vds - Drain-Source Breakdown Voltage 50 V
Pd - Power Dissipation 360 mW
Transistor Polarity N-Channel
Id - Continuous Drain Current 220 mA
Forward Transconductance - Min 0.5 S

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