MOSFET N-CH 60V 320MA SOT23-3

Condition: New
Brand: ON SEMICONDUCTOR
MPN: 2N7002KT1G
MPN Xref:2N7002KT1G, ONSM-0122887, 2317894, 2N7002KT1GOSDKR-ND, ONSM-0048977, 50M6388, 863-2N7002KT1G, 2N7002KT1GOSCT-ND, ONSM-0039401

MOSFET N-CH 60V 320MA SOT23-3

Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	0.38A
Power dissipation	0.42W
Case	SOT23
Gate-source voltage	?20V
On-state resistance	2.5?
Mounting	SMD
Gate charge	0.7nC
Kind of package	reel,
Kind of channel	enhanced
Package/Case	SOT-23-3
Product Categories	MOSFET
RoHs Status	Rohs
Marking Code	704x
In-stock	81000
Configuration	Single
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Reel
Fall Time	9 ns
Minimum Operating Temperature	- 55 C
Power Dissipation	300 mW
Rise Time	9 ns
Factory Pack Quantity	3000
Typical Turn Off Delay Time	55.8 ns
Manufacturer Product Number	2N7002KT1G
Description	MOSFET N-CH 60V 320MA SOT23-3
Manufacturer Standard Lead Time	25 Weeks
Detailed Description	N-Channel 60 V 320mA (Ta) 300mW (Ta) Surface Mount SOT-23-3 (TO-236)
Category	Discrete Semiconductor Products
Mfr	onsemi
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25?C	320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	0.7 nC @ 4.5 V
Vgs (Max)	?20V
Input Capacitance (Ciss) (Max) @ Vds	24.5 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	300mW (Ta)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	2N7002
Part Status	Active

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