MOSFET N-Channel Transistor
MOSFET N-Channel Transistor
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$0.08 USD
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44 in stock
Condition: New
Brand: ON Semiconductor
MPN: 2N7000
MPN Xref:2N7000, 58K9650, 33C8339, 17100217, 783594, FAIR-0018143, 497-3110-ND, 107-2N7000, WI-591-2-24508
MOSFET N-CH 60V 200mA TO92-3. Small signal field-effect transistor.
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: ON Semiconductor
MPN: 2N7000
MPN Xref:2N7000, 58K9650, 33C8339, 17100217, 783594, FAIR-0018143, 497-3110-ND, 107-2N7000, WI-591-2-24508
MOSFET N-CH 60V 200mA TO92-3. Small signal field-effect transistor.
Product Category | MOSFET |
Id - Continuous Drain Current | 200 mA |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 5 Ohms |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 350 mW |
Mounting Style | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Channel Mode | Enhancement |
Configuration | Single |
Typical Turn On / Off Delay Time | 10 ns |
Item model number | 2N7000 |
ASIN | B00CHTOD96 |
Category | Discrete Semiconductor Products |
Series | - |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | DMOS |
Current - Continuous Drain (Id) @ 25?C | 350mA (Tc) |
Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
FET Feature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-92 |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Manufacturer | ONSEMI |
Manufacturer Product Number | 2N7000 |
Description | MOSFET N-CH 60V 200MA TO92-3 |
Detailed Description | N-Channel 60 V 350mA (Tc) 350mW (Ta) Through Hole TO-92-3 |
Mfr | Fairchild Semiconductor |
Product Status | Active |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 5 V |
Vgs (Max) | ?18V |
Power Dissipation (Max) | 400mW (Ta) |
Operating Temperature | 150?C (TJ) |
Base Product Number | 2N7000 |
Manufacturer Standard Lead Time | 23 Weeks |
Case | TO92 |
EAN | 5052406832377 |
Type | Transistor N Channel MOSFET |
Vbr DSS | 60 |
Vbr GSS | 40 |
Max. PD (W) | 400m |
Ciss Max. (F) | 60p |
Derate (Amb) (W/?C) | 3.2m |
gfs Max. | 200m- |
gfs Min | 100u |
Id Max. (A) | 200m |
Idss Max. (A) | 1.0m |
I(d) for G(fs) | 200m |
R(ds) On (?) | 5.0= |
Vp Max. | 3.0 |
Oper. Temp (?C) Max. | 150 |
Pinout Equivalence Number | 3-19 |
Surface Mounted Yes/No | NO |
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.2A |
Pulsed drain current | 0.5A |
Power dissipation | 0.4W |
Gate-source voltage | ?20V |
On-state resistance | 9? |
Mounting | THT |
Kind of package | bulk |
Kind of channel | enhanced |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.