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MOSFET N-Channel Transistor

MOSFET N-Channel Transistor

Regular price $0.08 USD
Regular price Sale price $0.08 USD
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44 in stock

Condition: New
Brand: ON Semiconductor
MPN: 2N7000
MPN Xref:2N7000, 58K9650, 33C8339, 17100217, 783594, FAIR-0018143, 497-3110-ND, 107-2N7000, WI-591-2-24508

MOSFET N-CH 60V 200mA TO92-3. Small signal field-effect transistor.
Product Category MOSFET
Id - Continuous Drain Current 200 mA
Vds - Drain-Source Breakdown Voltage 60 V
Rds On - Drain-Source Resistance 5 Ohms
Transistor Polarity N-Channel
Vgs - Gate-Source Breakdown Voltage 20 V
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 350 mW
Mounting Style Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Channel Mode Enhancement
Configuration Single
Typical Turn On / Off Delay Time 10 ns
Item model number 2N7000
ASIN B00CHTOD96
Category Discrete Semiconductor Products
Series -
Package Bulk
Part Status Active
FET Type N-Channel
Technology DMOS
Current - Continuous Drain (Id) @ 25?C 350mA (Tc)
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
FET Feature -
Mounting Type Through Hole
Supplier Device Package TO-92
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Manufacturer ONSEMI
Manufacturer Product Number 2N7000
Description MOSFET N-CH 60V 200MA TO92-3
Detailed Description N-Channel 60 V 350mA (Tc) 350mW (Ta) Through Hole TO-92-3
Mfr Fairchild Semiconductor
Product Status Active
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 5 V
Vgs (Max) ?18V
Power Dissipation (Max) 400mW (Ta)
Operating Temperature 150?C (TJ)
Base Product Number 2N7000
Manufacturer Standard Lead Time 23 Weeks
Case TO92
EAN 5052406832377
Type Transistor N Channel MOSFET
Vbr DSS 60
Vbr GSS 40
Max. PD (W) 400m
Ciss Max. (F) 60p
Derate (Amb) (W/?C) 3.2m
gfs Max. 200m-
gfs Min 100u
Id Max. (A) 200m
Idss Max. (A) 1.0m
I(d) for G(fs) 200m
R(ds) On (?) 5.0=
Vp Max. 3.0
Oper. Temp (?C) Max. 150
Pinout Equivalence Number 3-19
Surface Mounted Yes/No NO
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.2A
Pulsed drain current 0.5A
Power dissipation 0.4W
Gate-source voltage ?20V
On-state resistance 9?
Mounting THT
Kind of package bulk
Kind of channel enhanced


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