Diode General Purpose 100V 200mA
Diode General Purpose 100V 200mA
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Low stock: 10 left
Condition: New
Brand: ONSEMI
MPN: 1N4448TR
MPN Xref:1N4448TR, 1N4448VSTR-ND, 83C2456, 05R0354, 1N4448VSCT-ND, 1N4448CT-ND, 782760, 8050949, 78-1N4448
DIODE GEN PURP 100V 200MA DO35
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WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: ONSEMI
MPN: 1N4448TR
MPN Xref:1N4448TR, 1N4448VSTR-ND, 83C2456, 05R0354, 1N4448VSCT-ND, 1N4448CT-ND, 782760, 8050949, 78-1N4448
DIODE GEN PURP 100V 200MA DO35
Diode Configuration | Single |
Number of Elements per Chip | 1 |
Brand | ON Semiconductor |
Package Type | DO-35 |
Maximum Continuous Forward Current | 200mA |
Mounting Type | Through Hole |
Diameter | 1.91mm |
Maximum Forward Voltage Drop | 720mV |
Pin Count | 2 |
Peak Non-Repetitive Forward Surge Current | 4A |
Diode Type | Silicon Junction |
Peak Reverse Repetitive Voltage | 100V |
Peak Reverse Recovery Time | 4ns |
Diode Technology | Silicon Junction |
Stock | |
Category | Discrete Semiconductor Products |
Mfr | ON Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
Part Status | Active |
Current - Average Rectified (Io) | 200mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
Package / Case | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Operating Temperature - Junction | -55?C ~ 175?C |
Voltage - DC Reverse (Vr) (Max) | 100 V |
Reverse Recovery Time (trr) | 4 ns |
Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
Current - Reverse Leakage @ Vr | 5 ?A @ 75 V |
Base Product Number | 1N4448 |
Package/Case | DO-35 |
Product Categories | Diodes (General Purpose, Power, Switching) |
RoHs Status | Rohs |
In-stock | 64002 |
Configuration | Single |
Recovery Time | 8 ns |
Forward Voltage Drop | 1 V |
Maximum Reverse Leakage Current | 5 nA |
Operating Temperature Range | + 175 C |
Mounting Style | Through Hole |
Packaging | Reel |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 65 C |
Part # Aliases | 1N4448-TR |
Product Status | Active |
Manufacturer Product Number | 1N4448TR |
Description | DIODE GEN PURP 100V 200MA DO35 |
Manufacturer Standard Lead Time | 22 Weeks |
Detailed Description | Diode 100 V 200mA Through Hole DO-35 |
Technology | Standard |
Type of diode | switching |
Mounting | THT |
Max. off-state voltage | 100V |
Load current | 0.3A |
Semiconductor structure | single diode |
Capacitance | 2pF |
Max. forward impulse current | 4A |
Case | DO35 |
Max. forward voltage | 1V |
Leakage current | 50?A |
Power dissipation | 0.5W |
Reverse recovery time | 4ns |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.