MOSFET P-CH 20V 2.8A TO236AB

Condition: New
Brand: NXP Semiconductors
MPN: PMV65XP,215
MPN Xref:PMV65XP,215, 568-2358-2-ND, PMV65XP,215/BKN, PMV65XP.215, 771-PMV65XP-T/R, PMV65XP 215, 1758119RL, 568-2358-6-ND, PMV65XP,215**MULT1

MOSFET P-Channel 20V 2.8A TO236AB - Active

Manufacturer	NEXPERIA
Manufacturer Product Number	PMV65XP,215
Description	MOSFET P-CH 20V 2.8A TO236AB
Manufacturer Standard Lead Time	12 Weeks
Detailed Description	P-Channel 20 V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB
Category	Discrete Semiconductor Products
Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25?C	2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250?A
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Vgs (Max)	?12V
Input Capacitance (Ciss) (Max) @ Vds	744 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	480mW (Ta)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	PMV65
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-1.8A
Power dissipation	833mW
Case	SOT23,
Gate-source voltage	?12V
On-state resistance	135m?
Mounting	SMD
Gate charge	7.7nC
Kind of package	reel,
Kind of channel	enhanced
Part Status	Active

Parts of this page were generated by an AI

WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov

All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.