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N-Channel MOSFET for Discrete Semiconductor Products

N-Channel MOSFET for Discrete Semiconductor Products

Regular price $0.07 USD
Regular price Sale price $0.07 USD
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22 in stock

Condition: New
MPN Xref:NX7002BKR, NXP1-0128399, 85X3465, 771-NX7002BKR

This N-Channel MOSFET is perfect for use in discrete semiconductor products. It has a maximum continuous drain current of 270mA and a maximum on-state resistance of 2.8Ohm at 200mA and 10V. The FET is surface mountable and comes in a TO-236AB package. It has a drain-source voltage of 60V and a gate charge of 1nC at 10V.
Category Discrete Semiconductor Products
Series -
Package Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250?A
Vgs (Max) ?20V
FET Feature -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss) 60 V
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V
Base Product Number NX7002
Package/Case SOT-23-3
Product Categories Transistors - FETs, MOSFETs - Single
RoHs Status Lead free / RoHS Compliant
In-stock 1000
Number of Cells 6
Charge Current 900 mA
Battery Type Secondary
Charge Time 20 hr
Capacity 18 Ah
Special Features Absorbent Glass Mat (AGM) technology for superior performance
Memory Effect No
Mounting Desktop
Non Rechargeable/Rechargeable Rechargeable
Lead Finish Tin
Product Length 181 mm
RoHS Non-Compliant
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.17A
Pulsed drain current 0.9A
Case SOT23,
On-state resistance 5.7?
Gate charge 1nC
Kind of package reel,
Kind of channel enhanced

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