N-Channel MOSFET for Discrete Semiconductor Products

Condition: New
Brand: NEXPERIA
MPN: NX7002BKR
MPN Xref:NX7002BKR, NXP1-0128399, 85X3465, 771-NX7002BKR

This N-Channel MOSFET is perfect for use in discrete semiconductor products. It has a maximum continuous drain current of 270mA and a maximum on-state resistance of 2.8Ohm at 200mA and 10V. The FET is surface mountable and comes in a TO-236AB package. It has a drain-source voltage of 60V and a gate charge of 1nC at 10V.

Category	Discrete Semiconductor Products
Series	-
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C	270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250?A
Vgs (Max)	?20V
FET Feature	-
Power Dissipation (Max)	310mW (Ta), 1.67W (Tc)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	23.6 pF @ 10 V
Base Product Number	NX7002
Package/Case	SOT-23-3
Product Categories	Transistors - FETs, MOSFETs - Single
RoHs Status	Lead free / RoHS Compliant
In-stock	1000
Number of Cells	6
Charge Current	900 mA
Battery Type	Secondary
Charge Time	20 hr
Capacity	18 Ah
Special Features	Absorbent Glass Mat (AGM) technology for superior performance
Memory Effect	No
Mounting	Desktop
Non Rechargeable/Rechargeable	Rechargeable
Lead Finish	Tin
Product Length	181 mm
RoHS	Non-Compliant
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	0.17A
Pulsed drain current	0.9A
Case	SOT23,
On-state resistance	5.7?
Gate charge	1nC
Kind of package	reel,
Kind of channel	enhanced

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