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MOSFET P-Channel 50V 130mA TO-236AB

MOSFET P-Channel 50V 130mA TO-236AB

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164 in stock

Condition: New
Brand: NXP
MPN: BSS84,215
MPN Xref:BSS84,215, BSS84215, 1510765, BSS84.216, 2319389, 75R4702, 568-1660-2-ND, 771-BSS84-T/R, 568-1660-6-ND

This MOSFET P-Channel transistor has a maximum drain-source voltage of 50V and a continuous drain current of 130mA. It is surface mountable and comes in a TO-236AB package.
Category Discrete Semiconductor Products
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ?20V
FET Feature -
Power Dissipation (Max) 250mW (Tc)
Operating Temperature -65?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss) 50V
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Base Product Number BSS84
Manufacturer NEXPERIA
Manufacturer Product Number BSS84,215
Description MOSFET P-CH 50V 130MA TO236AB
Detailed Description P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
Product Status Not For New Designs
Configuration Single
Package/Case SOT-23-3
Pd - Power Dissipation 250 mW
Mounting Style SMD/SMT
Alternate Part No. 771-BSS84-T/R
Minimum Operating Temperature - 65 C
Vds - Drain-Source Breakdown Voltage - 50 V
Maximum Operating Temperature + 150 C
Product Category MOSFET
Rds On - Drain-Source Resistance 6 Ohms
Transistor Polarity P-Channel
Id - Continuous Drain Current 130 mA
Vgs - Gate-Source Breakdown Voltage 20 V
Part # Aliases BSS84 T/R
Channel Mode Enhancement
Packaging Reel
Manufacturer Part No. BSS84,215
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -50V
Drain current -130mA
Power dissipation 0.25W
Case SOT23,
Gate-source voltage ?20V
On-state resistance 10?
Mounting SMD
Kind of package reel,
Kind of channel enhanced


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