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NXP MOSFET Discrete Semiconductor Product TO-236AB SOT23

NXP MOSFET Discrete Semiconductor Product TO-236AB SOT23

Regular price $0.02 USD
Regular price Sale price $0.02 USD
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285 in stock

Condition: New
MPN: 2N7002K,215
MPN Xref:2N7002K,215, 2N7002K,216, 568-4984-6-ND, 568-4984-2-ND, 118-2N7002K-215, 75R4882, 568-4984-1-ND, 1758065, 7258344

This NXP MOSFET is a discrete semiconductor product packaged in Tape & Reel (TR) and TO-236AB (SOT23) packages. It is an N-Channel MOSFET with a maximum drain source voltage of 60V and a maximum continuous drain current of 340mA.
Category Discrete Semiconductor Products
Mfr NXP USA Inc.
Series TrenchMOS?
Package Obsolete
Part Status N-Channel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On) 3.9Ohm @ 500mA, 10V
Rds On (Max) @ Id, Vgs 2V @ 1mA
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 830mW (Ta)
Operating Temperature -65?C ~ 150?C (TJ)
Mounting Type TO-236AB (SOT23)
Supplier Device Package TO-236-3, SC-59, SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss) 40 pF @ 10 V
Product Status Obsolete
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
Base Product Number 2N70
Maximum Operating Temperature +150 °C
Number of Elements per Chip 1
Length 3mm
Brand NXP
Maximum Continuous Drain Current 340 mA
Package Type TO-236AB
Maximum Power Dissipation 830 mW
Minimum Operating Temperature -65 °C
Width 1.4mm
Height 1mm
Maximum Drain Source Resistance 3.9 ?
Maximum Drain Source Voltage 60 V
Pin Count 3
Channel Mode Enhancement
Channel Type Channel Type
Maximum Gate Source Voltage Maximum Gate Source Voltage
Stock Stock

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