N-Channel HEXFET MOSFET 60V 120A TO-220AB
N-Channel HEXFET MOSFET 60V 120A TO-220AB
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$0.89 USD
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$0.89 USD
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20 in stock
Condition: New
Brand: Infineon
MPN: IRFB3206PBF
MPN Xref:IRFB3206PBF, 70017942, 942-IRFB3206PBF, 495574, 1436949, 17137490, 18M1460, 605092, IRFB3206PBF-ND
This MOSFET is an N-Channel, HEXFET type with a drain to source voltage of 60V and a drain current of 120A. It has a power dissipation of 300W and is designed for through-hole mounting.
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: Infineon
MPN: IRFB3206PBF
MPN Xref:IRFB3206PBF, 70017942, 942-IRFB3206PBF, 495574, 1436949, 17137490, 18M1460, 605092, IRFB3206PBF-ND
This MOSFET is an N-Channel, HEXFET type with a drain to source voltage of 60V and a drain current of 120A. It has a power dissipation of 300W and is designed for through-hole mounting.
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25?C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150?A |
Vgs (Max) | ?20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55?C ~ 175?C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Drain to Source Voltage (Vdss) | 60 V |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6540 pF @ 50 V |
Manufacturer Product Number | IRFB3206PBF |
Description | MOSFET N-CH 60V 120A TO220AB |
Manufacturer Standard Lead Time | 14 Weeks |
Detailed Description | N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-220AB |
Category | Discrete Semiconductor Products |
Series | HEXFET Series |
Package | Tube |
Product Status | Active |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Base Product Number | IRFB3206 |
Package/Case | TO-220AB |
Product Categories | MOSFET |
RoHs Status | Green |
In-stock | 4917 |
Mounting Style | Through Hole |
Packaging | Tube |
Gate Charge Qg | 120 nC |
Power Dissipation | 300 W |
Factory Pack Quantity | 50 |
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 150A |
Power dissipation | 300W |
Case | TO220AB |
Gate-source voltage | ?20V |
On-state resistance | 3m? |
Mounting | THT |
Gate charge | 0.12?C |
Kind of package | tube |
Kind of channel | enhanced |
Channel Type | N |
Configuration | Dual Drain |
Dimensions | 10.67 x 4.83 x 9.02 mm |
Drain Current | 210 A |
Drain to Source On Resistance | 3 mOhms |
Drain to Source Voltage | 60 V |
Forward Transconductance | 210 S |
Forward Voltage, Diode | 1.3 V |
Gate to Source Voltage | ±20 V |
Height | 0.355" (9.02mm) |
Input Capacitance | 6540 pF @ 50 V |
Length | 0.42 in |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Package Type | TO-220AB |
Temperature Operating Range | -55 to +175 °C |
Turn Off Delay Time | 55 ns |
Turn On Delay Time | 19 ns |
Typical Gate Charge @ Vgs | 120 nC @ 10 V |
Width | 0 in |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.