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N-Channel HEXFET MOSFET 60V 120A TO-220AB

N-Channel HEXFET MOSFET 60V 120A TO-220AB

Regular price $0.89 USD
Regular price Sale price $0.89 USD
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20 in stock

Condition: New
Brand: Infineon
MPN: IRFB3206PBF
MPN Xref:IRFB3206PBF, 70017942, 942-IRFB3206PBF, 495574, 1436949, 17137490, 18M1460, 605092, IRFB3206PBF-ND

This MOSFET is an N-Channel, HEXFET type with a drain to source voltage of 60V and a drain current of 120A. It has a power dissipation of 300W and is designed for through-hole mounting.
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150?A
Vgs (Max) ?20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55?C ~ 175?C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 60 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
Manufacturer Product Number IRFB3206PBF
Description MOSFET N-CH 60V 120A TO220AB
Manufacturer Standard Lead Time 14 Weeks
Detailed Description N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-220AB
Category Discrete Semiconductor Products
Series HEXFET Series
Package Tube
Product Status Active
Drive Voltage (Max Rds On, Min Rds On) 10V
Base Product Number IRFB3206
Package/Case TO-220AB
Product Categories MOSFET
RoHs Status Green
In-stock 4917
Mounting Style Through Hole
Packaging Tube
Gate Charge Qg 120 nC
Power Dissipation 300 W
Factory Pack Quantity 50
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 150A
Power dissipation 300W
Case TO220AB
Gate-source voltage ?20V
On-state resistance 3m?
Mounting THT
Gate charge 0.12?C
Kind of package tube
Kind of channel enhanced
Channel Type N
Configuration Dual Drain
Dimensions 10.67 x 4.83 x 9.02 mm
Drain Current 210 A
Drain to Source On Resistance 3 mOhms
Drain to Source Voltage 60 V
Forward Transconductance 210 S
Forward Voltage, Diode 1.3 V
Gate to Source Voltage ±20 V
Height 0.355" (9.02mm)
Input Capacitance 6540 pF @ 50 V
Length 0.42 in
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Number of Pins 3
Package Type TO-220AB
Temperature Operating Range -55 to +175 °C
Turn Off Delay Time 55 ns
Turn On Delay Time 19 ns
Typical Gate Charge @ Vgs 120 nC @ 10 V
Width 0 in


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