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P-MOSFET Transistor - -12V, -3.5A, TUMT6 Case, 1W Power Dissipation

P-MOSFET Transistor - -12V, -3.5A, TUMT6 Case, 1W Power Dissipation

Regular price $0.07 USD
Regular price Sale price $0.07 USD
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50 in stock

Condition: New
Brand: ROHM
MPN Xref:RAL035P01TCR, 755-RAL035P01TCR, RAL035P01TCR-ND, ROHM-0068131

This P-MOSFET transistor has a drain-source voltage of -12V and a drain current of -3.5A. It features enhanced channel mode and ESD protected gate. The transistor is mounted on a TUMT6 case and has a power dissipation of 1W. It is available in reel packaging and is RoHs compliant.
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -12V
Drain current -3.5A
Pulsed drain current -12A
Power dissipation 1W
Case TUMT6
On-state resistance 150m?
Mounting SMD
Gate charge 22nC
Kind of package reel,
Kind of channel enhanced
Features of semiconductor devices ESD protected gate
Package/Case TUMT-6
Product Categories MOSFET
RoHs Status Rohs
Marking Code SB
In-stock 70000
Category Discrete Semiconductor Products
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25?C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V
Vgs (Max) -8V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 6 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package TUMT6
Package / Case 6-SMD, Flat Leads
Base Product Number RAL035
Rds On - Drain-Source Resistance 30 mOhms
Id - Continuous Drain Current 3.5 A
Pd - Power Dissipation 1 W
Typical Turn-Off Delay Time 230 ns
Fall Time 75 ns
Rise Time 30 ns
Forward Transconductance - Min 4 S
Packaging Reel
Vds - Drain-Source Breakdown Voltage - 12 V
Manufacturer Part No. RAL035P01TCR
Transistor Polarity P-Channel
Product Category MOSFET
Configuration Single
Qg - Gate Charge 22 nC
Alternate Part No. 755-RAL035P01TCR
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage 8 V
Channel Mode Enhancement
Number of Elements per Chip 2
Length 2.1mm
Maximum Continuous Drain Current 3.5 A
Package Type SOT-363T
Maximum Power Dissipation 1 W
Width 1.8mm
Maximum Gate Threshold Voltage 0.3V
Minimum Gate Threshold Voltage 1V
Height 0.82mm
Maximum Drain Source Resistance 150 m?
Maximum Drain Source Voltage 12 V
Pin Count Pin Count
Typical Gate Charge @ Vgs Typical Gate Charge @ Vgs
Channel Type Channel Type
Maximum Gate Source Voltage Maximum Gate Source Voltage
Forward Diode Voltage Forward Diode Voltage
Stock Stock

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