P-MOSFET Transistor - -12V, -3.5A, TUMT6 Case, 1W Power Dissipation

Condition: New
Brand: ROHM
MPN: RAL035P01TCR
MPN Xref:RAL035P01TCR, 755-RAL035P01TCR, RAL035P01TCR-ND, ROHM-0068131

This P-MOSFET transistor has a drain-source voltage of -12V and a drain current of -3.5A. It features enhanced channel mode and ESD protected gate. The transistor is mounted on a TUMT6 case and has a power dissipation of 1W. It is available in reel packaging and is RoHs compliant.

Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-12V
Drain current	-3.5A
Pulsed drain current	-12A
Power dissipation	1W
Case	TUMT6
On-state resistance	150m?
Mounting	SMD
Gate charge	22nC
Kind of package	reel,
Kind of channel	enhanced
Features of semiconductor devices	ESD protected gate
Package/Case	TUMT-6
Product Categories	MOSFET
RoHs Status	Rohs
Marking Code	SB
In-stock	70000
Category	Discrete Semiconductor Products
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25?C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Vgs (Max)	-8V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TUMT6
Package / Case	6-SMD, Flat Leads
Base Product Number	RAL035
Rds On - Drain-Source Resistance	30 mOhms
Id - Continuous Drain Current	3.5 A
Pd - Power Dissipation	1 W
Typical Turn-Off Delay Time	230 ns
Fall Time	75 ns
Rise Time	30 ns
Forward Transconductance - Min	4 S
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	- 12 V
Manufacturer Part No.	RAL035P01TCR
Transistor Polarity	P-Channel
Product Category	MOSFET
Configuration	Single
Qg - Gate Charge	22 nC
Alternate Part No.	755-RAL035P01TCR
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+150 °C
Mounting Style	SMD/SMT
Vgs - Gate-Source Breakdown Voltage	8 V
Channel Mode	Enhancement
Number of Elements per Chip	2
Length	2.1mm
Maximum Continuous Drain Current	3.5 A
Package Type	SOT-363T
Maximum Power Dissipation	1 W
Width	1.8mm
Maximum Gate Threshold Voltage	0.3V
Minimum Gate Threshold Voltage	1V
Height	0.82mm
Maximum Drain Source Resistance	150 m?
Maximum Drain Source Voltage	12 V
Pin Count	Pin Count
Typical Gate Charge @ Vgs	Typical Gate Charge @ Vgs
Channel Type	Channel Type
Maximum Gate Source Voltage	Maximum Gate Source Voltage
Forward Diode Voltage	Forward Diode Voltage
Stock	Stock

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