N-MOSFET Transistor - 40V, 2.4A, SOT23, 58m?, SMD, TrenchFET SI23 Series
N-MOSFET Transistor - 40V, 2.4A, SOT23, 58m?, SMD, TrenchFET SI23 Series
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$0.16 USD
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50 in stock
Condition: New
Brand: VISHAY
MPN: SI2318DS-T1-GE3
MPN Xref:SI2318DS-T1-GE3, 1867178, SI2318DS-T1-GE3TR-ND, 84R8029, 70459674, SI2318DS-T1-GE3CT-ND, 781-SI2318DS-GE3, SI2318DS-T1-GE3DKR-ND
This N-MOSFET transistor is a unipolar transistor with a drain-source voltage of 40V and a drain current of 2.4A. It has a power dissipation of 0.48W and a case type of SOT23. The gate-source voltage is -20V and the on-state resistance is 58m?. It is a surface mount device (SMD) with a gate charge of 10nC. The transistor is part of the TrenchFET SI23 Series and it comes in a TO-236-3 package.
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: VISHAY
MPN: SI2318DS-T1-GE3
MPN Xref:SI2318DS-T1-GE3, 1867178, SI2318DS-T1-GE3TR-ND, 84R8029, 70459674, SI2318DS-T1-GE3CT-ND, 781-SI2318DS-GE3, SI2318DS-T1-GE3DKR-ND
This N-MOSFET transistor is a unipolar transistor with a drain-source voltage of 40V and a drain current of 2.4A. It has a power dissipation of 0.48W and a case type of SOT23. The gate-source voltage is -20V and the on-state resistance is 58m?. It is a surface mount device (SMD) with a gate charge of 10nC. The transistor is part of the TrenchFET SI23 Series and it comes in a TO-236-3 package.
Current - Continuous Drain (Id) @ 25?C | 3A (Ta) |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 20V |
Lead Free Status / RoHS Status | RoHS Compliant |
Manufacturer Part Number | SI2318DS-T1-GE3 |
Manufacturer Standard Lead Time | 31 Weeks |
Mounting Type | Surface Mount |
Operating Temperature | -55 |
Package / Case | TO-236-3 |
Packaging | Reel |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
Series | TrenchFET |
Standard Package | 3,000 |
Supplier Device Package | SOT-23-3 (TO-236) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | |
Vgs(th) (Max) @ Id | 3V @ 250 |
Alternate Parts | SI2318 |
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 40V |
Drain current | 2.4A |
Power dissipation | 0.48W |
Case | SOT23 |
Gate-source voltage | ?20V |
On-state resistance | 58m? |
Mounting | SMD |
Gate charge | 10nC |
Kind of package | reel, |
Kind of channel | enhanced |
Category | Discrete Semiconductor Products |
Package | Tape & Reel (TR) |
Part Status | Active |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Base Product Number | SI2318 |
Product Status | Active |
Package/Case | TO-236-3 |
Product Categories | MOSFET |
RoHs Status | Rohs |
In-stock | 42500 |
Resistance Drain Source RDS (on) | 0.045 Ohms |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT |
Minimum Operating Temperature | - 55 C |
Power Dissipation | 750 mW |
Factory Pack Quantity | 3000 |
Typical Turn Off Delay Time | 20 ns |
Part # Aliases | SI2318DS-GE3 |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.