MOSFET N-Channel 20V 2.6A
MOSFET N-Channel 20V 2.6A
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Low stock: 5 left
Condition: New
Brand: VISHAY SILICONIX
MPN: SI2302CDS-T1-E3
MPN Xref:SI2302CDS-T1-E3, SI2302CDS-T1-E3DKR-ND, 70459662, VISH-0164512, 69W7186, SI2302CDS-T1-E3CT-ND, 781-SI2302CDS-E3, 2335285, SI2302CDS-T1-E3TR-ND
MOSFET N-CH 20V 2.6A SOT23-3
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: VISHAY SILICONIX
MPN: SI2302CDS-T1-E3
MPN Xref:SI2302CDS-T1-E3, SI2302CDS-T1-E3DKR-ND, 70459662, VISH-0164512, 69W7186, SI2302CDS-T1-E3CT-ND, 781-SI2302CDS-E3, 2335285, SI2302CDS-T1-E3TR-ND
MOSFET N-CH 20V 2.6A SOT23-3
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Length | 3.04mm |
Transistor Configuration | Single |
Brand | Vishay |
Maximum Continuous Drain Current | 2.6 A |
Package Type | SOT-23 |
Maximum Power Dissipation | 0.71 W |
Mounting Type | Surface Mount |
Minimum Operating Temperature | -55 °C |
Width | 1.4mm |
Maximum Gate Threshold Voltage | 0.85V |
Height | 1.02mm |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Drain Source Resistance | 75 m? |
Maximum Drain Source Voltage | Maximum Drain Source Voltage |
Pin Count | Pin Count |
Typical Gate Charge @ Vgs | Typical Gate Charge @ Vgs |
Channel Mode | Channel Mode |
Channel Type | Channel Type |
Maximum Gate Source Voltage | Maximum Gate Source Voltage |
Forward Diode Voltage | Forward Diode Voltage |
Stock | Stock |
Manufacturer Product Number | SI2302CDS-T1-E3 |
Description | MOSFET N-CH 20V 2.6A SOT23-3 |
Manufacturer Standard Lead Time | 63 Weeks |
Detailed Description | N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236) |
Category | Discrete Semiconductor Products |
Series | TrenchFET? |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25?C | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 57mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id | 850mV @ 250?A |
Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
Vgs (Max) | ?8V |
FET Feature | - |
Power Dissipation (Max) | 710mW (Ta) |
Operating Temperature | -55?C ~ 150?C (TJ) |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | SI2302 |
Part Status | Active |
Package/Case | SOT-23-3 |
Product Categories | MOSFET |
RoHs Status | Lead free/RoHS Compliant |
In-stock | 38047 |
Resistance Drain Source RDS (on) | 0.057 Ohms |
Configuration | Single |
Mounting Style | SMD/SMT |
Packaging | Reel |
Fall Time | 7 ns |
Power Dissipation | 710 mW |
Rise Time | 7 ns |
Factory Pack Quantity | 3000 |
Typical Turn Off Delay Time | 30 ns |
Part # Aliases | SI2302CDS-E3 |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.