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Vishay SUPERECTIFIER™ Silicon Junction Diode - 600V, 1A, DO-204AL Package

Vishay SUPERECTIFIER™ Silicon Junction Diode - 600V, 1A, DO-204AL Package

Regular price $0.09 USD
Regular price Sale price $0.09 USD
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Low stock: 10 left

Condition: New
Brand: Vishay Semiconductor Diodes Division
MPN: RGP10J-E3/54
MPN Xref:RGP10J-E3/54, 625-RGP10J-E3L, RGP10J-E3/54GICT-ND, 8129159, RGP10J-E3/54GITR-ND

This SUPERECTIFIER™ diode from Vishay General Semiconductor - Diodes Division is a fast recovery silicon junction diode with a maximum reverse voltage of 600V and an average rectified current of 1A. It has a low forward voltage of 1.3V at 1A and a fast recovery time of 250ns. The diode is available in a DO-204AL package and is suitable for through hole mounting. It operates in a wide temperature range of -65°C to 175°C.
Category Discrete Semiconductor Products
Mfr Vishay General Semiconductor - Diodes Division
Series SUPERECTIFIER?
Package Tape & Reel (TR)
Product Status Active
Diode Type Silicon Junction
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 250 ns
Current - Reverse Leakage @ Vr 5 ?A @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
Operating Temperature - Junction -65?C ~ 175?C
Base Product Number RGP10
Diode Configuration Single
Rectifier Type Switching
Number of Elements per Chip 1
Brand Vishay
Package Type DO-204AL
Maximum Continuous Forward Current 1A
Diameter 2.7mm
Maximum Forward Voltage Drop 1.3V
Pin Count 2
Peak Non-Repetitive Forward Surge Current 30A
Peak Reverse Repetitive Voltage 600V
Peak Reverse Recovery Time 250ns
Diode Technology Silicon Junction
Stock Stock


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