N-MOSFET Transistor - 100V, 4A, 43W - TO220AB Package

Condition: New
Brand: Vishay Siliconix
MPN: IRF510PBF
MPN Xref:IRF510PBF, 844-IRF510PBF, VISH-0044712, 17114804, VISH-0078889, 70078850, 7085134, IRF510PBF-ND, RF510PBF

This N-MOSFET transistor has a drain-source voltage of 100V and a drain current of 4A. It is suitable for various electronic applications.

Manufacturer	VISHAY
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	4A
Power dissipation	43W
Case	TO220AB
Gate-source voltage	?20V
On-state resistance	0.54?
Mounting	THT
Gate charge	8.3nC
Kind of package	tube
Kind of channel	enhanced
Category	Discrete Semiconductor Products
Series	-
Package	TO-220AB
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250?A
Vgs (Max)	?20V
FET Feature	-
Power Dissipation (Max)	43W (Tc)
Operating Temperature	-55?C ~ 175?C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 25 V
Package/Case	TO-220AB
Product Categories	MOSFET
RoHs Status	Lead free/RoHS Compliant
In-stock	2399
Resistance Drain Source RDS (on)	0.54 Ohms
Configuration	Single
Maximum Operating Temperature	+175 °C
Mounting Style	Through Hole
Packaging	Tube
Fall Time	9.4 ns
Minimum Operating Temperature	-55 °C
Power Dissipation	43 W
Rise Time	16 ns
Factory Pack Quantity	1000
Typical Turn Off Delay Time	15 ns
Manufacturer Part Number	IRF510PBF
Item Number	IRF510PBF
Product Series	TO-220
Family Series	Vishay Transistors, TO-220 Series
Circuit Type	N-Channel
Drain Source Voltage Vds	100 VDC
Drain Current Id(rms)	5.6 A
Gate Source Voltage Vgss	20 VDC
Typ. Vgs(th)	3 VDC
Gate Leakage Current	0.1 ?A
rDS(on)	540 mOhm
Turn On Delay Time	6.9 ns
Rise Time tr	16 ns
Turn Off Delay Time	15 ns
Fall Time tf	9.4 ns
Trr	100 ns
RoHS	Yes
Net Weight	0 lbs
Gross Weight	0 lbs
Channel Type	N
Dimensions	10.51 x 4.65 x 15.49 mm
Drain Current	5.6 A
Drain to Source On Resistance	0.54 Ohms
Drain to Source Voltage	100 V
Forward Transconductance	1.3 S
Forward Voltage, Diode	2.5 V
Gate to Source Voltage	+/-20 V
Height	0.61" (15.49mm)
Input Capacitance	180 pF @ 25 V
Length	0.413 in
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220AB
Polarization	N-Channel
Product Header	Hexfet® Power MOSFET
Temperature Operating Range	-55 to +175 °C
Total Gate Charge	8.3 nC
Typical Gate Charge @ Vgs	Maximum of 8.3 nC @ 10 V
Voltage, Breakdown, Drain to Source	100 V
Width	0 in

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