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N-MOSFET Transistor - 100V, 4A, 43W - TO220AB Package

N-MOSFET Transistor - 100V, 4A, 43W - TO220AB Package

Regular price $0.15 USD
Regular price Sale price $0.15 USD
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50 in stock

Condition: New
Brand: Vishay Siliconix
MPN Xref:IRF510PBF, 844-IRF510PBF, VISH-0044712, 17114804, VISH-0078889, 70078850, 7085134, IRF510PBF-ND, RF510PBF

This N-MOSFET transistor has a drain-source voltage of 100V and a drain current of 4A. It is suitable for various electronic applications.
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 4A
Power dissipation 43W
Case TO220AB
Gate-source voltage ?20V
On-state resistance 0.54?
Mounting THT
Gate charge 8.3nC
Kind of package tube
Kind of channel enhanced
Category Discrete Semiconductor Products
Series -
Package TO-220AB
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250?A
Vgs (Max) ?20V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55?C ~ 175?C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 100 V
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Package/Case TO-220AB
Product Categories MOSFET
RoHs Status Lead free/RoHS Compliant
In-stock 2399
Resistance Drain Source RDS (on) 0.54 Ohms
Configuration Single
Maximum Operating Temperature +175 °C
Mounting Style Through Hole
Packaging Tube
Fall Time 9.4 ns
Minimum Operating Temperature -55 °C
Power Dissipation 43 W
Rise Time 16 ns
Factory Pack Quantity 1000
Typical Turn Off Delay Time 15 ns
Manufacturer Part Number IRF510PBF
Item Number IRF510PBF
Product Series TO-220
Family Series Vishay Transistors, TO-220 Series
Circuit Type N-Channel
Drain Source Voltage Vds 100 VDC
Drain Current Id(rms) 5.6 A
Gate Source Voltage Vgss 20 VDC
Typ. Vgs(th) 3 VDC
Gate Leakage Current 0.1 ?A
rDS(on) 540 mOhm
Turn On Delay Time 6.9 ns
Rise Time tr 16 ns
Turn Off Delay Time 15 ns
Fall Time tf 9.4 ns
Trr 100 ns
RoHS Yes
Net Weight 0 lbs
Gross Weight 0 lbs
Channel Type N
Dimensions 10.51 x 4.65 x 15.49 mm
Drain Current 5.6 A
Drain to Source On Resistance 0.54 Ohms
Drain to Source Voltage 100 V
Forward Transconductance 1.3 S
Forward Voltage, Diode 2.5 V
Gate to Source Voltage +/-20 V
Height 0.61" (15.49mm)
Input Capacitance 180 pF @ 25 V
Length 0.413 in
Number of Elements per Chip 1
Number of Pins 3
Package Type TO-220AB
Polarization N-Channel
Product Header Hexfet® Power MOSFET
Temperature Operating Range -55 to +175 °C
Total Gate Charge 8.3 nC
Typical Gate Charge @ Vgs Maximum of 8.3 nC @ 10 V
Voltage, Breakdown, Drain to Source 100 V
Width 0 in

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