MOSFET N-CH 60V 300mA SOT23-3

Condition: New
Brand: SILICONIX (VISHAY)
MPN: 2N7002K-T1-E3
MPN Xref:2N7002K-T1-E3, VISH-0115512, 2N7002KT1E3, 1837251, TMOSS5713, 06J8894, 781-2N7002K-E3, 2N7002K-T1-E3CT-ND, 70026085

This is a MOSFET N-CH 60V 300mA SOT23-3 discrete semiconductor product. It has a surface mount package and is lead free/RoHS compliant.

Manufacturer	VISHAY
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	0.19A
Pulsed drain current	0.8A
Power dissipation	0.14W
Case	SOT23
Gate-source voltage	?20V
On-state resistance	2?
Mounting	SMD
Gate charge	0.4nC
Kind of package	reel,
Kind of channel	enhanced
Features of semiconductor devices	ESD protected gate
Manufacturer Product Number	2N7002K-T1-E3
Description	MOSFET N-CH 60V 300MA SOT23-3
Manufacturer Standard Lead Time	17 Weeks
Detailed Description	N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
Category	Discrete Semiconductor Products
Mfr	Vishay Siliconix
Series	2N7002 Series
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25?C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Vgs (Max)	?20V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	2N7002
Package/Case	SOT-23-3
Product Categories	MOSFET
RoHs Status	Lead free/RoHS Compliant
In-stock	2682695
Resistance Drain Source RDS (on)	7.5 Ohms
Configuration	Single
Maximum Operating Temperature	+150 °C
Mounting Style	SMD/SMT
Packaging	Reel
Minimum Operating Temperature	-55 °C
Power Dissipation	0.2 W
Factory Pack Quantity	3000
Typical Turn Off Delay Time	35 ns
Part # Aliases	2N7002K-E3
Channel Type	Channel Type
Dimensions	3.04 x 1.4 x 1.02 mm
Drain Current	300 mA
Drain to Source On Resistance	4 Ohms
Drain to Source Voltage	60 V
Forward Transconductance	100 mS
Forward Voltage, Diode	1.3 V
Gate to Source Voltage	±20 V
Height	0.04" (1.02mm)
Input Capacitance	30 pF @ 25 V
Length	3.04mm
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to +150 C
Package Type	TO-236
Polarization	N-Channel
Product Header	TrenchFET® Power MOSFET
Temperature Operating Range	-55 to +150 °C
Total Gate Charge	0.4 nC
Turn Off Delay Time	35 ns
Turn On Delay Time	25 ns
Typical Gate Charge @ Vgs	Typical Gate Charge @ Vgs
Voltage, Breakdown, Drain to Source	60 V
Width	0.055 in
Transistor Configuration	Single
Brand	Vishay
Maximum Continuous Drain Current	300 mA
Maximum Power Dissipation	350 mW
Minimum Gate Threshold Voltage	1V
Maximum Drain Source Resistance	2 ?
Maximum Drain Source Voltage	60 V
Pin Count	Pin Count
Channel Mode	Channel Mode
Maximum Gate Source Voltage	Maximum Gate Source Voltage
Stock	Stock

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