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MOSFET N-CH 60V 300mA SOT23-3

MOSFET N-CH 60V 300mA SOT23-3

Regular price $0.07 USD
Regular price Sale price $0.07 USD
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25 in stock

Condition: New
MPN: 2N7002K-T1-E3
MPN Xref:2N7002K-T1-E3, VISH-0115512, 2N7002KT1E3, 1837251, TMOSS5713, 06J8894, 781-2N7002K-E3, 2N7002K-T1-E3CT-ND, 70026085

This is a MOSFET N-CH 60V 300mA SOT23-3 discrete semiconductor product. It has a surface mount package and is lead free/RoHS compliant.
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.19A
Pulsed drain current 0.8A
Power dissipation 0.14W
Case SOT23
Gate-source voltage ?20V
On-state resistance 2?
Mounting SMD
Gate charge 0.4nC
Kind of package reel,
Kind of channel enhanced
Features of semiconductor devices ESD protected gate
Manufacturer Product Number 2N7002K-T1-E3
Description MOSFET N-CH 60V 300MA SOT23-3
Manufacturer Standard Lead Time 17 Weeks
Detailed Description N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
Category Discrete Semiconductor Products
Mfr Vishay Siliconix
Series 2N7002 Series
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25?C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250?A
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ?20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number 2N7002
Package/Case SOT-23-3
Product Categories MOSFET
RoHs Status Lead free/RoHS Compliant
In-stock 2682695
Resistance Drain Source RDS (on) 7.5 Ohms
Configuration Single
Maximum Operating Temperature +150 °C
Mounting Style SMD/SMT
Packaging Reel
Minimum Operating Temperature -55 °C
Power Dissipation 0.2 W
Factory Pack Quantity 3000
Typical Turn Off Delay Time 35 ns
Part # Aliases 2N7002K-E3
Channel Type Channel Type
Dimensions 3.04 x 1.4 x 1.02 mm
Drain Current 300 mA
Drain to Source On Resistance 4 Ohms
Drain to Source Voltage 60 V
Forward Transconductance 100 mS
Forward Voltage, Diode 1.3 V
Gate to Source Voltage ±20 V
Height 0.04" (1.02mm)
Input Capacitance 30 pF @ 25 V
Length 3.04mm
Number of Elements per Chip 1
Number of Pins 3
Operating and Storage Temperature -55 to +150 C
Package Type TO-236
Polarization N-Channel
Product Header TrenchFET® Power MOSFET
Temperature Operating Range -55 to +150 °C
Total Gate Charge 0.4 nC
Turn Off Delay Time 35 ns
Turn On Delay Time 25 ns
Typical Gate Charge @ Vgs Typical Gate Charge @ Vgs
Voltage, Breakdown, Drain to Source 60 V
Width 0.055 in
Transistor Configuration Single
Brand Vishay
Maximum Continuous Drain Current 300 mA
Maximum Power Dissipation 350 mW
Minimum Gate Threshold Voltage 1V
Maximum Drain Source Resistance 2 ?
Maximum Drain Source Voltage 60 V
Pin Count Pin Count
Channel Mode Channel Mode
Maximum Gate Source Voltage Maximum Gate Source Voltage
Stock Stock

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