P-Channel MOSFET (Metal Oxide) - 12V, 4A, SOT-23-3

P-Channel MOSFET (Metal Oxide) - 12V, 4A, SOT-23-3

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Regular price Sale price $0.43 USD
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19 in stock

Condition: New
MPN: DMP1045U-7
MPN Xref:DMP1045U-7

This P-Channel MOSFET (Metal Oxide) is a discrete semiconductor product with a drain to source voltage of 12V and continuous drain current of 4A. It has a maximum on-state resistance of 31mOhm at 4A and 4.5V. The gate charge is 15.8nC at 4.5V and the input capacitance is 1357pF at 10V. It is RoHS compliant and has a surface mount package type of SOT-23-3.
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -12V
Drain current -3.1A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ?8V
On-state resistance 75m?
Mounting SMD
Kind of package reel,
Kind of channel enhanced
Features of semiconductor devices ESD protected gate
Package/Case TO-236-3, SC-59, SOT-23-3
Product Categories MOSFET
RoHs Status Rohs
In-stock 45000
Category Discrete Semiconductor Products
Mfr Diodes Incorporated
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25?C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250?A
Gate Charge (Qg) (Max) @ Vgs 15.8 nC @ 4.5 V
Vgs (Max) ?8V
Input Capacitance (Ciss) (Max) @ Vds 1357 pF @ 10 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMP1045
Part Status Active

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