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Bipolar Transistor NPN TO-220 6A 100V 3MHz 2W

Bipolar Transistor NPN TO-220 6A 100V 3MHz 2W

Regular price $0.12 USD
Regular price Sale price $0.12 USD
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Low stock: 5 left

Condition: New
Brand: ON SEMICONDUCTOR
MPN: TIP41CG
MPN Xref:TIP41CG, 1166987, 70099575, 45J2286, 7743684, TIP41CGOS-ND, 863-TIP41CG, 803911, 26M4157

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Through Hole TO-220
Product Category Transistors Bipolar - BJT
Configuration Common Base
Maximum DC Collector Current 6 A
Maximum Power Dissipation 65 W
Collector-Emitter Saturation Voltage 1.5 V
Package/Case TO-220-3
Continuous Collector Current 6 A
Collector- Emitter Voltage VCEO Max 100 V
Mounting Style Through Hole
Minimum Operating Temperature -65 °C
Manufacturer Part No. TIP41CG
DC Collector/Base Gain hFE Min 30
Emitter- Base Voltage VEBO 5 V
Maximum Operating Temperature +150 °C
Collector- Base Voltage VCBO 100 V
Gain Bandwidth Product fT 3 MHz
Series -
Transistor Polarity NPN
Alternate Part No. 863-TIP41CG
Packaging Tube
Category Discrete Semiconductor Products
Mfr onsemi
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 700?A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V
Power - Max 2W
Frequency - Transition 3MHz
Operating Temperature -65?C ~ 150?C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Base Product Number TIP41
Part Status Active
Product Categories Bipolar Transistors
RoHs Status Green
In-stock 5600
Emitter Base Voltage VEBO 5 V
Collector Emitter Saturation Voltage 1.5 V
DC Collector/Base Gain hfe Min 30
Factory Pack Quantity 50
Manufacturer ONSEMI
Manufacturer Product Number TIP41CG
Description TRANS NPN 100V 6A TO220
Manufacturer Standard Lead Time 13 Weeks
Detailed Description Bipolar (BJT) Transistor NPN 100 V 6 A 3MHz 2 W Through Hole TO-220
Alternate Mfr Part Number 7743684
Collector Current 6 A
Collector to Base Voltage 100 V
Collector to Emitter Voltage 100 V
Dimensions 10.28 x 4.82 x 15.75 mm
Emitter to Base Voltage 5 V
Height 0.62" (15.75mm)
Length 0.404 in
Material Si
Number of Elements per Chip 1
Number of Pins 3
Operating Frequency 3 MHz
Package Type TO-220
Polarity NPN
Power Dissipation 65 W
Primary Type Si
Product Header Complementary Silicon Plastic Power Transistor
Resistance, Thermal, Junction to Case 1.67 °C/W
Temperature Operating Range -65 to +150 °C
Type Power
Voltage, Breakdown, Collector to Emitter 100 V
Voltage, Collector to Emitter, Saturation 1.5 V
Width 0 in
Type of transistor NPN
Polarisation bipolar
Collector-emitter voltage 100V
Collector current 6A
Power dissipation 65W
Case TO220AB
Current gain 15...75
Mounting THT
Kind of package tube
Frequency 3MHz


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