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MOSFET N-Channel 30V 1.4A Supersot3

MOSFET N-Channel 30V 1.4A Supersot3

Regular price $0.08 USD
Regular price Sale price $0.08 USD
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55 in stock

Condition: New
MPN Xref:NDS351AN, NDS351AN/BKN, NDS351ANDKR-ND, 6711080, 1562552, NDS351AN**MULT1, 67R2126, 58K9481, 9845410

Manufacturer ONSEMI
Type SemiConductor
Brand Fairchild Semiconductor
Fall Time 8 ns
Series NDS351
Manufacturer Part No. NDS351AN
Rise Time 8 ns
Id - Continuous Drain Current 1.4 A
Pd - Power Dissipation 500 mW
Minimum Operating Temperature - 55 C
Rds On - Drain-Source Resistance 92 mOhms
Transistor Polarity N-Channel
Mounting Style SMD/SMT
Package/Case SSOT-3
Packaging Reel
Unit Weight 30 mg
Vds - Drain-Source Breakdown Voltage 30 V
Maximum Operating Temperature + 150 C
Product Category MOSFET
Alternate Part No. 512-NDS351AN
Configuration Single
Vgs - Gate-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 16 ns
Channel Mode Enhancement
Part # Aliases NDS351AN_NL
Drain Source Breakdown Voltage 30 V
Gate Source Breakdown Voltage +/- 20 V
Continuous Drain Current 1.4 A
Resistance Drain Source RDS (on) 0.092 Ohms
Package / Case TO-236-3, SC-59, SOT-23-3
Power Dissipation 0.5 W
Factory Pack Quantity 3000
Typical Turn Off Delay Time 16 ns
Manufacturer Product Number NDS351AN
Description MOSFET N-CH 30V 1.4A SUPERSOT3
Detailed Description N-Channel 30 V 1.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Category Discrete Semiconductor Products
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology PowerTrench?
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25?C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250?A
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 4.5 V
Vgs (Max) ?20V
Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 15 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55?C ~ 150?C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Base Product Number NDS351
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 1.4A
Power dissipation 0.5W
Case SOT23
Gate-source voltage ?20V
On-state resistance 250m?
Mounting SMD
Gate charge 1.8nC
Kind of package reel,
Kind of channel enhanced

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