N-Channel MOSFET TO-220F-3 Transistor
N-Channel MOSFET TO-220F-3 Transistor
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$0.83 USD
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344 in stock
Condition: New
Brand: Fairchild Semiconductor
MPN: FQPF9N50C
MPN Xref:FQPF9N50C
This N-Channel MOSFET has a Drain to Source Voltage of 500V and a Continuous Drain Current of 9A. It has a maximum Rds On of 800mOhm and a Gate Charge of 35nC.
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WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: Fairchild Semiconductor
MPN: FQPF9N50C
MPN Xref:FQPF9N50C
This N-Channel MOSFET has a Drain to Source Voltage of 500V and a Continuous Drain Current of 9A. It has a maximum Rds On of 800mOhm and a Gate Charge of 35nC.
Current | 9 |
Package/Case | TO-220 |
Product Categories | MOSFET |
RoHs Status | Green |
Life Cycle | Obsoleted |
In-stock | 7000 |
Configuration | Single |
Maximum Operating Temperature | +150 °C |
Mounting Style | Through Hole |
Package / Case | TO-220F |
Packaging | Tube |
Fall Time | 64 ns |
Forward Transconductance gFS (Max / Min) | 6.5 S |
Minimum Operating Temperature | - 55 C |
Power Dissipation | 44 W |
Rise Time | 65 ns |
Factory Pack Quantity | 50 |
Typical Turn Off Delay Time | 93 ns |
Part # Aliases | FQPF9N50C_NL |
EAN | 5052406519018 |
Case | TO220F |
Type | Transistor N Channel MOSFET |
Category | Discrete Semiconductor Products |
Mfr | onsemi |
Series | QFET? |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25?C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250?A |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Vgs (Max) | ?30V |
Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 44W (Tc) |
Operating Temperature | -55?C ~ 150?C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Base Product Number | FQPF9 |
Part Status | Active |
Number of Elements per Chip | 1 |
Length | 10.16mm |
Maximum Continuous Drain Current | 9 A |
Package Type | TO-220F |
Maximum Power Dissipation | 44 W |
Width | 4.7mm |
Height | 9.19mm |
Maximum Drain Source Resistance | 800 m? |
Maximum Drain Source Voltage | 500 V |
Pin Count | 3 |
Typical Gate Charge @ Vgs | 28 nC @ 10 V |
Channel Mode | Channel Mode |
Channel Type | Channel Type |
Maximum Gate Source Voltage | Maximum Gate Source Voltage |
Stock | Stock |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.