P-Channel 100V 1.1A SOT223 MOSFET

Condition: New
Brand: Siliconix / Vishay
MPN: IRFL9110TRPBF
MPN Xref:IRFL9110TRPBF, IRFL9110TRPBF**MULT1, 9765468, IRFL9110PBFTR-ND, 19K8171, IRFL9110PBFCT-ND, 844-IRFL9110TRPBF, 8152730, IRFL9110PBFDKR-ND

This MOSFET is a P-Channel transistor with a drain-source voltage of 100V and a continuous drain current of 1.1A. It is surface mountable and comes in the SOT-223 package.

Rds On - Drain-Source Resistance	1.2 Ohms
Pd - Power Dissipation	2 W
Alternate Part No.	844-IRFL9110TRPBF
Brand	Vishay / Siliconix
Manufacturer	VISHAY
Vgs - Gate-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.1 A
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package/Case	SOT-223-3
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	- 100 V
Typical Turn-Off Delay Time	15 ns
Manufacturer Part No.	IRFL9110TRPBF
Configuration	Single Dual Drain
Minimum Operating Temperature	- 55 C
Product Category	MOSFET
Transistor Polarity	P-Channel
Fall Time	17 ns
Rise Time	27 ns
Packaging	Reel
Manufacturer Product Number	IRFL9110TRPBF
Description	MOSFET P-CH 100V 1.1A SOT223
Manufacturer Standard Lead Time	17 Weeks
Detailed Description	P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Category	Discrete Semiconductor Products
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25?C	1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id	4V @ 250?A
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Vgs (Max)	?20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)
Operating Temperature	-55?C ~ 150?C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Base Product Number	IRFL9110
Product Categories	MOSFET
RoHs Status	Lead free/RoHS Compliant
In-stock	162695
Resistance Drain Source RDS (on)	1.2 Ohms
Power Dissipation	2 W
Factory Pack Quantity	2500
Typical Turn Off Delay Time	15 ns
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-0.69A
Pulsed drain current	-8.8A
Power dissipation	3.1W
Case	SOT223
Gate-source voltage	?20V
On-state resistance	1.2?
Mounting	SMD
Gate charge	8.7nC
Kind of package	reel,
Kind of channel	enhanced
Manufacturer Part Number	IRFL9110TRPBF
Item Number	IRFL9110TRPBF
Product Series	SOT-223
Family Series	Vishay Transistors, SOT-223 Series
Circuit Type	P-Channel
Drain Source Voltage Vds	100 VDC
Drain Current Id(rms)	1.1 A
Gate Source Voltage Vgss	20 VDC
Typ. Vgs(th)	3 VDC
Gate Leakage Current	0.1 ?A
rDS(on)	1,200 mOhm
Turn On Delay Time	10 ns
Rise Time tr	27 ns
Turn Off Delay Time	15 ns
Fall Time tf	17 ns
Trr	80 ns
RoHS	Yes
Net Weight	0 lbs
Gross Weight	0 lbs

Parts of this page were generated by an AI

WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov

All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.