2.8A N-Channel Transistor for Automotive Applications
2.8A N-Channel Transistor for Automotive Applications
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$0.04 USD
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250 in stock
Condition: New
Brand: DIODES INC.
MPN: DMG2302UK-7
MPN Xref:DMG2302UK-7
This MOSFET N-Channel transistor is suitable for automotive applications and has a continuous drain current of 2.8A.
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WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.
Brand: DIODES INC.
MPN: DMG2302UK-7
MPN Xref:DMG2302UK-7
This MOSFET N-Channel transistor is suitable for automotive applications and has a continuous drain current of 2.8A.
Category | Discrete Semiconductor Products |
Mfr | Diodes Incorporated |
Series | DMG2302UK |
Package | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25?C | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 90mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250?A |
Vgs (Max) | ?12V |
FET Feature | - |
Power Dissipation (Max) | 660mW (Ta) |
Operating Temperature | -55?C ~ 150?C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Drain to Source Voltage (Vdss) | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
Base Product Number | DMG2302 |
Product Status | Active |
Package/Case | SOT-23 |
Product Categories | Transistors - FETs, MOSFETs - Single |
RoHs Status | Lead free/RoHS Compliant |
Life Cycle | Production |
In-stock | 65230 |
Pin Count | 3 |
Maximum Drain Source Resistance | 120 m? |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 0.3V |
Maximum Power Dissipation | 1.1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 1mm |
Width | 1.4mm |
Length | 3mm |
Forward Diode Voltage | 1.2V |
Typical Gate Charge @ Vgs | 2.8 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Manufacturer | DIODES INCORPORATED |
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 20V |
Drain current | 2.2A |
Pulsed drain current | 12A |
Power dissipation | 0.66W |
Case | SOT23 |
Gate-source voltage | ?12V |
On-state resistance | 90m? |
Mounting | SMD |
Kind of package | reel, |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |
Manufacturer Product Number | DMG2302UK-7 |
Description | MOSFET N-CH 20V 2.8A SOT23 |
Manufacturer Standard Lead Time | 20 Weeks |
Detailed Description | N-Channel 20 V 2.8A (Ta) 660mW (Ta) Surface Mount SOT-23-3 |
Parts of this page were generated by an AI
WARNING: Products on this website can expose you to chemicals including Lead which is known to the State of California to cause cancer and birth defects or other reproductive harm. For more information go to www.P65Warnings.ca.gov
All orders are subject to inventory availability and approval. We are not responsible or liable for errors in the listings.